A logic embedded non-volatile memory device according to the present invention comprises: a first extinction gate line for extinguishing multiple first memory cells; a second extinction gate line for extinguishing multiple second memory cells, electrically separated from the first extinction gate line; a global extinction gate line which receives an extinction voltage; an extinction gate select switch formed between the first memory cells and the second memory cells, and which connects the global extinction gate line to the first extinction gate line or the second extinction gate line according to a control signal.
申请公布号
KR20150054225(A)
申请公布日期
2015.05.20
申请号
KR20130136400
申请日期
2013.11.11
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JEON, CHANG MIN;YU, TEA KWANG;KIM, YONG TAE;SEO, BO YOUNG