A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

In a semiconductor device and a manufacturing method, the semiconductor device comprises a first electrode formed on a substrate. A selective element pattern having a first width is formed on the first electrode. A resistance changing film pattern having a second width narrower than the first width is formed on the selective element pattern. A first protective film pattern is formed on a pair of first sidewalls of the resistance changing film pattern facing each other. A second protective film pattern is formed on a pair of second sidewalls of the resistance changing film pattern facing each other. Moreover, a second electrode is formed on the resistance changing film pattern. The semiconductor device has excellent characteristic because a sidewall damage of the resistance changing film pattern is reduced.