| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a single crystal semiconductor, wherein a service life of a carbon heater can be extended to reduce the cost for the equipment, and a high-quality single crystal semiconductor can be produced. <P>SOLUTION: The production method for a single crystal semiconductor comprises immersing a seed in a semiconductor melt which is reserved in a crucible placed in a chamber and pulling the seed to grow a single crystal semiconductor, and the method includes: a water content removing step S10 of reducing the pressure in the chamber to 10<SP>-4</SP>Pa or lower to remove the water content in the chamber; a gas introduction step S20 of introducing an inert gas into the chamber; a dissolving step S30 of heating a semiconductor raw material housed in the crucible with a carbon heater to obtain the semiconductor melt; and a growing step S40 of pulling the seed immersed in the semiconductor melt to grow the single crystal semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
