摘要 |
<p>The invention relates to a method of reading out a CMOS image sensor. The respective pixels having a first mode and a second mode. The method comprises: i) setting a respective pixel (Pxl) in the first mode (SS); ii) resetting the respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde) and the first capacitance (C_low); iii) collecting charge carriers generated by the incident light on the respective photo-diode (Dde), wherein the collected charge carriers reduce the pixel potential (Vp) on the respective photo-diode (Dde) iv) reading out the respective pixel (Pxl) while set in the first mode (SS) and storing the pixel potential (Vp); v) reading out the respective pixel (Pxl) while set in the second mode (LS) and storing the pixel potential (Vp); vi) resetting the respective pixel (Pxl) such that the predefined voltage (V_ref) is set over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high); vii) reading out the respective pixel (Pxl) while set in the second mode (LS) and storing the pixel potential (Vp), and viii) reading out the respective pixel (Pxl) while set in the first mode (SS) and storing the pixel potential (Vp). The method results in an increased dynamic range of the CMOS image sensor. The invention also relates to the CMOS image sensor as such.</p> |