| 摘要 |
<p>An object of the present invention is to provide a plasma etching method capable of forming a tapered recess portion in a wide-gap semiconductor substrate. As a solving means therefor, a high speed etching film E an etching speed of which is higher than that of a wide-gap semiconductor substrate K is formed on the wide-gap semiconductor substrate K, and a mask M having an opening is formed on the high speed etching film E. Thereafter, the wide-gap semiconductor substrate K having the high speed etching film E and the mask M formed thereon is placed on a platen and is heated to a temperature equal to or higher than 200 °C, then a plasma is generated form an etching gas supplied into a processing chamber and a bias potential is applied to the platen, and thereby the wide-gap semiconductor substrate K is etched.</p> |
