| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To allow a lift-off process to be performed with no restrictions in resist form without requiring the use of a film forming method inferior in step coverage. <P>SOLUTION: After a film 3 to be patterned is formed on a resist 2, corner parts of the film 3 to be patterned is selectively etched by ion irradiation to expose the resist 2. Then, the resist 2 is removed to lift off the film 3 to be patterned on the resist 2, whereby the film 3 to be patterned is patterned. When the lift-off process is performed in this manner, the resist 2 can be exposed by ion irradiation though the film 3 to be patterned is thickly formed on a side surface of the resist 2. Therefore, the thickness of the film 3 to be patterned, on the side surface of the resist 2 is not restricted, so that it is unnecessary to daringly use a film forming method inferior in step coverage and selection of a film forming method superior in step coverage is allowed. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
