发明名称 SEMICONDUCTOR DEVICE TEST SYSTEM HAVING REDUCED CURRENT LEAKAGE
摘要 <p>A test circuit tests a device under test (DUT) uses a first switching device and a second switching device. The device under test (DUT) has a terminal for receiving a test signal. The first switching device has an output terminal for use in coupling the test signal to the terminal of the DUT when the DUT is being tested. The first switching device is high impedance when the DUT is not being tested. The second switching device is high impedance when the DUT is being tested and couples a bias control signal to the output terminal of the first switching device when the DUT is not being tested. The bias control signal substantially tracks the test signal. Leakage from the first switching device when other DUTs are being tested is greatly reduced because the bias control signal results in little or no bias across the first switching device.</p>
申请公布号 EP2191284(B1) 申请公布日期 2015.05.20
申请号 EP20080781984 申请日期 2008.07.17
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SMITH, BRADLEY P.
分类号 G01R31/26;G01R31/3163;G01R31/317 主分类号 G01R31/26
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