DUAL PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS

摘要

A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.