| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, having improved manufacturing efficiency of the semiconductor device. <P>SOLUTION: The method for manufacturing the semiconductor device includes: an acquisition step (step S12) for acquiring electric characteristics for each angle of layout of a transistor; an extraction step (steps S13, S14) for extracting the delay information of a basic cell having a transistor for each angle of layout of the basic cell based on the electric characteristics; and a verification process (step S15) for verifying the timing of a circuit block configured of the basic cell based on the delay information. Thus, the method for manufacturing a semiconductor device has improved manufacturing efficiency of the semiconductor device. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
