| 摘要 |
<p>Disclosed is a photoelectric conversion device which detects, by means of intraband transition, infrared light inputted perpendicularly. The photoelectric conversion device is provided with: a first conductive layer composed of a first conductivity type material; a photosensitizing layer formed on the first conductive layer; a second conductive layer, which is formed on the photosensitizing layer and is composed of a second conductivity type material; and a deflecting section formed on the second conductive layer. The photosensitizing layer performs photoelectric conversion by means of intraband transition process. In such case, the deflecting section may be configured so as to surround the first conductive layer, the photosensitizing layer, and the second conductive layer.</p> |
