| 摘要 |
A probe apparatus can measure both of static characteristics and dynamic characteristics of a power device at a wafer level and, particularly, can surely measure dynamic characteristics of a power device at a wafer level without being affected by a measurement line that measures static characteristics. The probe apparatus 10 has a movable mounting table 12 that mounts a wafer W on which multiple power devices are formed; a probe card 14 that is provided above the mounting table 12 and has multiple probes 14A; a conductive film electrode 13 formed on a mounting surface of the mounting table 12 and an outer peripheral surface thereof; and a measurement line 16 that electrically connects the conductive film electrode 13 to a tester 17. Further, the probe apparatus measures electrical characteristics of the power devices on the mounting table 12 at a wafer level. Furthermore, a second measurement line 16 includes a switch device 18 configured to open and close an electric path of the measurement line 16 between the conductive film electrode 13 and the tester 17. |
