| 摘要 |
The present invention relates to an electronic device, and more specifically, to an electronic device comprising a semiconductor memory. According to an embodiment of the present invention, the semiconductor memory comprises: a vertical electrode formed on a substrate and receiving voltage from its own one end; a variable resistance layer formed along the side of the vertical electrode and becoming thinner from one end to the other end of the vertical electrode; and a plurality of horizontal electrodes arranged to be adjacent to the vertical electrode across the variable resistance layer, and arranged to be separated on the substrate. |
