| 摘要 |
Disclosed is a flexible graphene switching device. The disclosed graphene switching device includes a graphene layer which is formed on a substrate, a plurality of semiconductor nanowires, wherein at least one semiconductor nanowire is connected to one end of the graphene layer on the substrate, a first electrode which is connected to the other end of the graphene layer, a second electrode which is arranged on the substrate to face a drain electrode and is connected to the semiconductor nanowires, a gate insulation layer which covers the graphene layer on the substrate, and a gate electrode which is formed on the gate insulation layer. The gate electrode faces the semiconductor nanowire by interposing the graphene layer. The semiconductor nanowire is doped with an n-type or a p-type. |
