发明名称 半導体装置及びその製造方法
摘要 <p>A semiconductor device includes a semiconductor substrate, an insulator film that is arranged above the semiconductor substrate, a first passivation film that is arranged above the insulator film, a second passivation film that is arranged above the first passivation film, a stress relaxation layer that is arranged above the second passivation film, an organic coated film that is arranged above the stress relaxation layer, and a resin layer that is arranged above the organic coated film, wherein a Young's modulus of the stress relaxation layer is smaller than a Young's modulus of the organic coated film, and is smaller than a Young's modulus of the second passivation film.</p>
申请公布号 JP5720647(B2) 申请公布日期 2015.05.20
申请号 JP20120193456 申请日期 2012.09.03
申请人 发明人
分类号 H01L21/768;H01L21/312;H01L21/318;H01L21/336;H01L23/532;H01L29/739;H01L29/78 主分类号 H01L21/768
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