发明名称 |
HIGH-POWER INFRARED SEMICONDUCTOR DIODE LIGHT EMITTING DEVICE |
摘要 |
<p>A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 1.30 and 1.61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.</p> |
申请公布号 |
EP1792375(B1) |
申请公布日期 |
2015.05.20 |
申请号 |
EP20050812667 |
申请日期 |
2005.09.22 |
申请人 |
SEMINEX CORPORATION |
发明人 |
BEAN, DAVID, M.;QIAN, YI;PULVER, DANIEL, E. |
分类号 |
H01S5/343;H01S5/024;H01S5/22 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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