Methods of forming tensile tungsten films and compressive tungsten films

摘要

Methods, apparatus, and systems for depositing tensile or compressive tungsten films are described. In one aspect, a method includes providing a substrate to a chamber. The substrate has a field region and a feature recessed from the field region. Then, the substrate is exposed to an organometallic tungsten precursor. The organometallic tungsten precursor not adsorbed onto the substrate is removed from the chamber. The substrate is treated with a first treatment including a heat treatment or a plasma treatment to form a tungsten layer on the substrate. After treating the substrate, residual gasses are removed from the chamber. The tungsten layer on the substrate is treated with a second treatment including a heat treatment or a plasma treatment.

主权项

1. A method comprising:
(a) providing a substrate to a chamber, the substrate having a field region and a feature recessed from the field region; (b) exposing the substrate to an organometallic tungsten precursor; (c) removing the organometallic tungsten precursor not adsorbed onto the substrate from the chamber; (d) treating the substrate with a first treatment including a heat treatment or a plasma treatment to form a tungsten layer on the substrate; (e) after operation (d), removing residual gasses from the chamber; and (f) treating the tungsten layer on the substrate with a second treatment including a heat treatment or a plasma treatment; and repeating operations (b) through (f), wherein a first time operations (b) through (f) are performed forms a tungsten layer having either a tensile stress or a compressive stress, and wherein a second time operations (b) through (f) are performed forms a tungsten-containing layer having the other of the tensile stress or the compressive stress.