Mirror for the EUV wavelength range, projection objective for microlithography comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective

摘要

A mirror for the EUV wavelength range (1) having a layer arrangement (P) applied on a substrate (S), the layer arrangement having a periodic sequence of individual layers, where the periodic sequence has at least two individual layers—forming a period—composed respectively of silicon (Si) and ruthenium (Ru). Also disclosed are a projection objective for microlithography (2) including such a mirror, and a projection exposure apparatus for microlithography having such a projection objective (2).

主权项

1. A mirror comprising:
a layer arrangement applied on a substrate and configured for an extreme-ultraviolet wavelength range of light, said layer arrangement comprising:
at least two periods of a periodic sequence, wherein each period of the periodic sequence consists of a silicon layer, a ruthenium layer, and at least one barrier layer composed of B4C having a thickness of greater than 0.35 nm and situated between the silicon layer and the ruthenium layer; and at least one barrier layer composed of B4C having a thickness of greater than 0.35 nm and situated between the at least two periods.