Power semiconductor module and power semiconductor module assembly with multiple power semiconductor modules

摘要

A power semiconductor module and a power semiconductor module assembly, which includes a plurality of power semiconductor modules, are disclosed. The power semiconductor module includes an electrically conducting base plate, an electrically conducting top plate, arranged in parallel to the base plate and spaced apart from the base plate, at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate, and at least one presspin, which is arranged in the space formed between the base plate and the top plate to provide contact between the semiconductor device and the top plate. A metallic protection plate can be provided at an inner face of the top plate facing towards the base plate, wherein the material of the protection plate has a melting temperature higher than the melting temperature of the top plate.

主权项

1. A power semiconductor module comprising:
an electrically conducting base plate; an electrically conducting top plate, which is arranged in parallel to the base plate and spaced apart from the base plate; at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate; at least one presspin, which is arranged in the space formed between the base plate and the top plate and configured to provide contact between the at least one power semiconductor device and the top plate; and a metallic protection plate provided at an inner face of the top plate facing towards the base plate, wherein a material of the protection plate has a melting temperature higher than a melting temperature of the top plate.