| 发明名称 | Semiconductor devices and fabrication methods | ||
| 摘要 | A method of making a semiconductor device comprises: providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a second mask layer over the first mask layer; annealing the second mask layer to form islands; etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars; and growing semiconductor material between the pillars and then over the tops of the pillars. | ||
| 申请公布号 | US9034739(B2) | 申请公布日期 | 2015.05.19 |
| 申请号 | US201214002826 | 申请日期 | 2012.02.29 |
| 申请人 | Seren Photonics Limited | 发明人 | Wang Tao |
| 分类号 | H01L21/20;H01L21/02;H01L33/00;H01L29/06;H01L29/20;H01L33/32;H01L33/18 | 主分类号 | H01L21/20 |
| 代理机构 | Fraser Clemens Martin & Miller LLC | 代理人 | Fraser Clemens Martin & Miller LLC ;Clemens William J. |
| 主权项 | 1. A method of making a semiconductor device comprising: (i) providing a semiconductor wafer having a semiconductor layer; (ii) forming a first mask layer of at least one of silicon dioxide and silicon nitride over the semiconductor layer; (iii) forming a second mask layer of metal over the first mask layer; (iv) annealing the second mask layer to form islands; (v) etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars each having a top; (vi) removing the islands; and (vii) growing semiconductor material between the pillars and then over the tops of the pillars, wherein the first mask layer is left on the top of each of the pillars to form a cap during the growing of the semiconductor material. | ||
| 地址 | Bridgend GB | ||