发明名称 |
Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device |
摘要 |
A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times. |
申请公布号 |
US9036431(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201414458800 |
申请日期 |
2014.08.13 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Chul Bum;Kim Hyung Gon;Lee Chul Ho;Chang Hong Seok |
分类号 |
G11C7/22;G11C16/08;G11C16/10;G11C16/32 |
主分类号 |
G11C7/22 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A nonvolatile memory system, comprising:
a controller configured to program a latency option, the controller being configured to generate a read enable signal, a read command and a read address; and a nonvolatile memory device configured to receive the latency option, the read enable signal, the read command and the read address, wherein the nonvolatile memory device is configured to detect a toggling of the read enable signal, the nonvolatile memory device is configured to generate a strobe signal in response to the toggling of the read enable signal, the nonvolatile memory device is configured to output data to the controller after the strobe signal is toggled N times, N being a value related to the latency option, the read enable signal remains constant while the read command and the read address are received by the nonvolatile memory device, and the read enable signal is toggled after the read command and the read address are received by the nonvolatile memory device. |
地址 |
Suwon-si, Gyeonggi-do KR |