发明名称 Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device
摘要 A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
申请公布号 US9036431(B2) 申请公布日期 2015.05.19
申请号 US201414458800 申请日期 2014.08.13
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Chul Bum;Kim Hyung Gon;Lee Chul Ho;Chang Hong Seok
分类号 G11C7/22;G11C16/08;G11C16/10;G11C16/32 主分类号 G11C7/22
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A nonvolatile memory system, comprising: a controller configured to program a latency option, the controller being configured to generate a read enable signal, a read command and a read address; and a nonvolatile memory device configured to receive the latency option, the read enable signal, the read command and the read address, wherein the nonvolatile memory device is configured to detect a toggling of the read enable signal, the nonvolatile memory device is configured to generate a strobe signal in response to the toggling of the read enable signal, the nonvolatile memory device is configured to output data to the controller after the strobe signal is toggled N times, N being a value related to the latency option, the read enable signal remains constant while the read command and the read address are received by the nonvolatile memory device, and the read enable signal is toggled after the read command and the read address are received by the nonvolatile memory device.
地址 Suwon-si, Gyeonggi-do KR