| 发明名称 | Piezoelectric thin-film resonator and method for manufacturing the same | ||
| 摘要 | A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film. | ||
| 申请公布号 | US9035536(B2) | 申请公布日期 | 2015.05.19 |
| 申请号 | US201213563505 | 申请日期 | 2012.07.31 |
| 申请人 | Taiyo Yuden Co., Ltd. | 发明人 | Ueda Masanori;Taniguchi Shinji;Nishihara Tokihiro |
| 分类号 | H01L41/09;H03H3/04;H03H9/17;H03H3/02 | 主分类号 | H01L41/09 |
| 代理机构 | Chen Yoshimura LLP | 代理人 | Chen Yoshimura LLP |
| 主权项 | 1. A piezoelectric thin-film resonator comprising: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided under said region of the upper electrode between the at least two layers and that is in direct contact with each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film. | ||
| 地址 | Tokyo JP | ||