| 发明名称 | Compound semiconductor device and manufacturing method thereof | ||
| 摘要 | A semiconductor device includes a semiconductor layer and a Schottky electrode, a Schottky junction being formed between the semiconductor layer and the Schottky electrode. The Schottky electrode includes a metal part containing a metal, a Schottky junction being formed between the semiconductor layer and the metal part; and a nitride part around the metal part, the nitride part containing a nitride of the metal, and a Schottky junction being formed between the semiconductor layer and the nitride part. | ||
| 申请公布号 | US9035414(B2) | 申请公布日期 | 2015.05.19 |
| 申请号 | US201313930352 | 申请日期 | 2013.06.28 |
| 申请人 | FUJITSU LIMITED | 发明人 | Minoura Yuichi;Okamoto Naoya |
| 分类号 | H01L29/47;H01L21/28;H01L21/44;H01L29/872;H01L27/08;H01L29/417;H01L29/423;H01L29/66;H01L29/778;H01L27/095;H01L29/20;H01L21/265 | 主分类号 | H01L29/47 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor layer; and a Schottky electrode, a Schottky junction being formed between the semiconductor layer and the Schottky electrode, wherein the Schottky electrode comprises: a metal part containing a metal, the metal part being in direct contact with the semiconductor layer, and a Schottky junction being formed between the semiconductor layer and the metal part; anda nitride part around the metal part, the nitride part containing a nitride of the metal, the nitride part being in direct contact with the semiconductor layer, and a Schottky junction being formed between the semiconductor layer and the nitride part, wherein the metal part and the nitride part are in direct contact with each other. | ||
| 地址 | Kawasaki JP | ||