Semiconductor substrate for photonic and electronic structures and method of manufacture

摘要

A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

主权项

1. An integrated structure comprising:
a semiconductor substrate having a planar upper surface; a first trench isolation area provided in a first region of the substrate and having a first depth into the substrate from the upper planar surface and a first cross-sectional width, said first trench isolation area having a depth sufficient to provide electrical isolation for an electronic device; a second trench isolation area provided in a second region of the substrate and having a second depth into the substrate from the planar upper surface and a second cross-sectional width which is greater than the first cross-sectional width, said second trench isolation area having a depth sufficient to provide optical isolation from the substrate for a photonic device.