发明名称 |
Semiconductor device fabrication method and semiconductor device |
摘要 |
There is provided a method of fabricating a semiconductor device, the method including: forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate. |
申请公布号 |
US9034708(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201314101373 |
申请日期 |
2013.12.10 |
申请人 |
LAPIS SEMICONDUCTOR CO., LTD. |
发明人 |
Yoshinari Masataka |
分类号 |
H01L21/304;H01L21/306;H01L29/36;H01L29/66;H01L29/739;H01L21/02;H01L21/265;H01L21/268 |
主分类号 |
H01L21/304 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate. |
地址 |
Yokohama JP |