| 摘要 |
A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire. |
| 主权项 |
1. A semiconductor laser, comprising:
a semiconductor nanowire of a first conductivity type provided over a substrate; a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof; a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer; a first electrode electrically coupled to an end portion of the semiconductor nanowire; a second electrode electrically coupled to an outer periphery of the cladding layer; a first reflection mirror provided at a one-end portion side of the semiconductor nanowire; and a second reflection mirror provided at the other end portion side of the semiconductor nanowire, wherein a refractive index n1 of a semiconductor material configuring the semiconductor nanowire, a refractive index n2 of a semiconductor material configuring the light emitting layer and a refractive index n3 of a semiconductor material configuring the cladding layer satisfy a relationship of n3<n1<n2, and any one of a condition that a product Δn·δ between a ratio Δn=(n2−n1)/n1 of a variation of the refractive index n2 of the semiconductor material configuring the light emitting layer with respect to the refractive index n1 of the semiconductor material configuring the semiconductor nanowire and a ratio δ=(r2−r1)/r1 of a film thickness (r2−r1) of the light emitting layer with respect to a radius r1 of the semiconductor nanowire is equal to or higher than 0.003 and r1·κ0 is equal to or higher than 2.61, κ0 being a wave number of the laser, a condition that Δn·δ is equal to or higher than 0.007 and r1·κ0 is equal to or higher than 2.24, a condition that Δn·δ is equal to or higher than 0.058 and r1·κ0 is equal to or higher than 1.046, a condition that Δn·δ is equal to or higher than 0.075 and r1·κ0 is equal to or higher than 0.896, a condition that Δn·δ is equal to or higher than 0.025 and r1·κ0 is equal to or higher than 2.61, a condition that Δn·δ is equal to or higher than 0.031 and r1·κ0 is equal to or higher than 2.24, a condition that Δn·δ is equal to or higher than 0.091 and r1·κ0 is equal to or higher than 1.046 and a condition that Δn·δ is equal to or higher than 0.118 and r1·κ0 is equal to or higher than 0.896 is satisfied. |
