Method for manufacturing a semiconductor substrate

摘要

The invention relates to a method for manufacturing a semiconductor substrate, in particular, a semiconductor-on-insulator substrate by providing a donor substrate and a handle substrate, forming a pattern of one or more doped regions typically inside the handle substrate, and then attaching such as by molecular bonding the donor substrate and the handle substrate to obtain a donor-handle compound.

主权项

1. A method for manufacturing a semiconductor substrate, comprising:
providing a donor substrate and a semiconductor handle substrate; implanting ions into the semiconductor handle substrate and forming one or more alignment marks buried completely inside the semiconductor handle substrate by the implantation of the ions, the one or more alignment marks being configured to be detectable using electromagnetic radiation in the infrared region of the electromagnetic spectrum; forming a plurality of doped regions buried completely inside the semiconductor handle substrate, each doped region of the plurality of doped regions comprising one or more dopants; and attaching the donor substrate and the semiconductor handle substrate together by molecular bonding to obtain a donor-handle combination, at least one of the donor substrate and the handle substrate including a surface layer of an insulator such that the donor-handle combination forms a semiconductor-on-insulator semiconductor substrate.