发明名称 Semiconductor light emitting element array
摘要 A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.
申请公布号 US9035332(B2) 申请公布日期 2015.05.19
申请号 US201313779694 申请日期 2013.02.27
申请人 STANLEY ELECTRIC CO., LTD. 发明人 Saito Tatsuma;Miyachi Mamoru;Chinone Takako;Nihei Noriko;Akagi Takanobu
分类号 H01L33/44;H01L33/58;H01L27/15;H01L33/00;H01L33/50 主分类号 H01L33/44
代理机构 Holtz, Holtz, Goodman & Chick PC 代理人 Holtz, Holtz, Goodman & Chick PC
主权项 1. A semiconductor light emitting element array comprising: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, wherein a pair of adjacent semiconductor light emitting elements is separated by a street, and wherein each of the semiconductor light emitting elements comprises: a first electrode formed on the support substrate,a semiconductor lamination which is formed on the first electrode and which includes a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer that is formed on the active layer, and that has a second conductivity type different from the first conductivity type, anda second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and a connection member which is disposed to bridge over at least a part of the street between a pair of adjacent semiconductor laminations, which defines a space together with the support substrate and the semiconductor light emitting elements, and which comprises an undoped semiconductor layer that has an electrical insulating property and an optical propagating property, wherein the connection member is located on the respective second semiconductor layers of the pair of adjacent semiconductor laminations.
地址 Tokyo JP