Semiconductor device

摘要

Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

主权项

1. A semiconductor device comprising:
an insulating film; an oxide semiconductor film over the insulating film; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film over the gate insulating film, wherein the insulating film and the oxide semiconductor film comprises hydrogen, and wherein a peak of a concentration profile of hydrogen is located in the insulating film.