发明名称 |
Transparent conductive substrate and method for manufacturing same |
摘要 |
The present invention provides a transparent conductive substrate comprising: a transparent substrate, and a conductive pattern provided on the transparent substrate, wherein the conductive pattern comprises line breakage portions performing electric breakage, and a pattern of a broken line formed when the line breakage portions are connected comprises an irregular pattern shape. The present invention can minimize a moiré phenomenon and a diffraction phenomenon by external light by performing line breakage of a regular or irregular conductive pattern by using the irregular pattern. |
申请公布号 |
US9035198(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201313973609 |
申请日期 |
2013.08.22 |
申请人 |
LG Chem, Ltd. |
发明人 |
Hwang Ji Young;Choi Hyeon;Lee Seung Heon;Kim Sujin;Kim Ki-Hwan |
分类号 |
H05K1/00;H05K1/11;G02B5/18;H05K3/10;G06F3/044;H05K9/00 |
主分类号 |
H05K1/00 |
代理机构 |
McKenna Long & Aldridge, LLP |
代理人 |
McKenna Long & Aldridge, LLP |
主权项 |
1. A transparent conductive substrate comprising:
a transparent substrate, and a conductive pattern provided on the transparent substrate,
wherein the conductive pattern comprises line breakage portions, a pattern for manufacturing the line breakage portions comprises an irregular pattern shape, the irregular pattern shape comprises an edge structure of continuously connected closed figures, and a number of vertexes of the closed figures is different from the number of vertexes of a same number of quadrangles as the closed figures; the number of vertexes of the closed figures is different from the number of vertexes of a polygon formed by connecting shortest distances between centers of gravity of the closed figures; or a value of the following Equation 1 is 50 or more in the closed figures:
(Standard deviation of distances between vertexes/Average of distances between vertexes)×100. [Equation 1] |
地址 |
Seoul KR |