| 发明名称 | Methods of selectively removing a substrate material | ||
| 摘要 | A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods. | ||
| 申请公布号 | US9034769(B2) | 申请公布日期 | 2015.05.19 |
| 申请号 | US201213712699 | 申请日期 | 2012.12.12 |
| 申请人 | Micron Technology, Inc. | 发明人 | Bossler Mark A.;Gandhi Jaspreet S.;Gambee Christopher J.;Parker Randall S. |
| 分类号 | H01L21/302;H01L21/461;H01L23/538;H01L21/306;H01L21/3065;H01L21/02 | 主分类号 | H01L21/302 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A method for selectively removing substrate material, the method comprising: oxidizing a semiconductor structure comprising a substrate and at least one copper feature to form a copper oxide material on the at least one copper feature; and removing a portion of the substrate using an etchant comprising sulfur hexafluoride (SF6) without forming copper sulfide on the at least one copper feature and without removing the copper oxide material on the at least one copper feature. | ||
| 地址 | Boise ID US | ||