Methodology for forming pnictide compositions suitable for use in microelectronic devices

摘要

The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.

主权项

1. A method of forming a Group IIB/VA pnictide composition, comprising the steps of:
a) providing at least one Group IIB/VA pnictide source compound, said pnictide source compound incorporating at least one pnictogen and at least one Group IIB element other than a pnictogen; b) treating the Group IIB/VA pnictide source compound under first conditions in a first processing zone in a manner effective to create a vapor flux comprising a vapor species, the vapor flux derived at least in part from the Group IIB/VA pnictide source compound and comprising PN2 and PN4 molecular pnictogen species having a first mole fraction of PN2 relative to PN4; c) treating the vapor flux under second conditions in a second processing zone in a manner effective to provide a modified vapor flux comprising PN2 and PN4 molecular pnictogen species having a second mole fraction of PN2 relative to PN4; and d) using ingredients including at least the treated vapor flux to form the Group IIB/VA pnictide composition.