发明名称 |
Method and apparatus for staggered start-up of a predefined, random or dynamic number of flash memory devices |
摘要 |
A method, apparatus, and manufacture for memory device startup is provided. Flash memory devices are configured such that, upon the power supply voltage reaching a pre-determined level, each flash memory is arranged to load the random access memory with instructions for the flash memory, and then execute a first portion of the instructions for the flash memory. After executing the first portion of the instructions for the flash memory, each separate subset of the flash memories waits for a separate, distinct delay period. For each flash memory, after the delay period expires for that flash memory, the flash memory executes a second portion of the instructions for the flash memory. |
申请公布号 |
US9036423(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201314099340 |
申请日期 |
2013.12.06 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
Sundahl Bradley Edman;O'Mullan Sean Michael;Yancey Gregory Charles;Okin Kenneth Alan |
分类号 |
G11C16/04;G11C16/30;G11C16/32 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus, comprising:
a plurality of memory devices, wherein each memory device of the plurality of memory devices is powered by a power supply, wherein, upon a voltage of the power supply reaching a pre-determined level, a first memory device of the plurality of memory devices is configured to:
receive a first set of instructions;execute a first portion of the first set of instructions; andafter executing the first portion of the first set of instructions, execute a second portion of the first set of instructions after a first delay period, and wherein, upon the power supply voltage reaching the pre-determined level, a second memory device of the plurality of memory devices is configured to:
receive a second set of instructions;execute a first portion of the second set of instructions; andafter executing the first portion of the second set of instructions, execute a second portion of the second set of instructions after a second delay period, the second delay period being different than the first delay period. |
地址 |
San Jose CA US |