Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same

摘要

Strings of memory cells having a string select gate configured to selectively couple ends of a string to a data line and a source line concurrently, memory devices incorporating such strings and methods for accessing and forming such strings are provided. For example, non-volatile memory devices are disclosed that utilize vertical structure NAND strings of serially-connected non-volatile memory cells. One such string including two or more serially-connected non-volatile memory cells where each end of the string shares a string select gate with the other end of the string is disclosed.

主权项

1. An electronic system, comprising:
controlling circuitry; and a memory device coupled to the controlling circuitry; wherein the memory device comprises a string of memory cells; and wherein a single string select gate is configured to concurrently selectively couple a first end of the string of memory cells to a data line and a second end of the string of memory cells to a source line.