Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

摘要

A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

主权项

1. A method of manufacturing a thin film transistor, the method comprising:
forming a semiconductor pattern including an oxide semiconductor material; forming an insulating layer and a gate electrode that traverse each other and overlap the semiconductor pattern; and performing a reduction process on the semiconductor pattern that is not covered by the insulating layer and the gate electrode to form a channel region covered by the gate electrode and to form a source region and a drain region facing each other with respect to the channel region.