| 发明名称 | Dicing tape-integrated film for semiconductor back surface | ||
| 摘要 | The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment. | ||
| 申请公布号 | US9035466(B2) | 申请公布日期 | 2015.05.19 |
| 申请号 | US201012975641 | 申请日期 | 2010.12.22 |
| 申请人 | NITTO DENKO CORPORATION | 发明人 | Takamoto Naohide;Matsumura Takeshi;Shiga Goji |
| 分类号 | H01L23/48;H01L21/50;H01L21/683;H01L21/67;H01L23/00 | 主分类号 | H01L23/48 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A process for producing a semiconductor device, the process comprising: attaching a workpiece onto a film for flip chip type semiconductor back surface of a dicing tape-integrated film for semiconductor back surface, dicing the workpiece to form a chip-shaped workpiece, peeling the chip-shaped workpiece from a pressure-sensitive adhesive layer of the dicing tape together with the film for flip chip type semiconductor back surface, and fixing the chip-shaped workpiece to an adherend by flip chip bonding, wherein the film for flip chip type semiconductor back surface of the dicing tape-integrated film for semiconductor back surface comprises a dicing tape comprising a base material and a pressure-sensitive adhesive layer provided on the base material; and the film for flip chip type semiconductor back surface, wherein the film is provided on the pressure-sensitive adhesive layer and the film contains a black pigment; wherein the film flip chip type semiconductor back surface has a thickness of 2 to 200 μm; wherein a ratio of a thickness of the film for semiconductor back surface to a thickness of the dicing tape is in a range of 150/50 to 3/500; wherein the film for flip chip type semiconductor back surface has a moisture absorbance of 1% by weight or less when the film is allowed to stand under an atmosphere of temperature of 85° C. and humidity of 85% RH for 168 hours; and wherein the film for flip chip type semiconductor back surface has a ratio of weight decrease of 1% by weight or less after heating at a temperature of 250° C. for 1 hour. | ||
| 地址 | Osaka JP | ||