Packaged semiconductor devices and packaging methods

摘要

Packaged semiconductor devices and packaging methods are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die and through-vias disposed in a molding compound. A first redistribution layer (RDL) is disposed over a first side of the through-vias, the integrated circuit die, and the molding compound. A second RDL is disposed over a second side of the through-vias, the integrated circuit die, and the molding compound. Contact pads are disposed over the second RDL. An insulating material of the second RDL includes a recess around a perimeter of one of the contact pads.

主权项

1. A method of packaging a semiconductor device, the method comprising:
forming a plurality of through-vias over a carrier; coupling an integrated circuit die to the carrier; forming a first redistribution layer (RDL) over a first side of the plurality of through-vias and the integrated circuit die; removing the carrier; forming a second RDL over a second side of the plurality of through-vias and the integrated circuit die, the second RDL being formed in an insulating material and having a topmost surface that is substantially co-planar with a topmost surface of the insulating material; forming a plurality of contact pads over the second RDL; and forming a recess in the insulating material of the second RDL proximate one of the plurality of contact pads, the recess being laterally displaced from the contact pad in the plane of the topmost surface of the insulating material; wherein the insulating material of the second RDL is disposed adjacent the plurality of contact pads, and wherein forming the recess comprises forming a trench in the insulating material around a perimeter of the one of the plurality of contact pads.