Thin-film transistor and zinc oxide-based sputtering target for the same

摘要

A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

主权项

1. A thin-film transistor comprising: a metal electrode;
a zinc oxide-based barrier film comprising zinc oxide doped with indium oxide, and a content of the indium oxide ranges, by weight, from 1 to 50 percent of the zinc oxide-based barrier film; and
an oxide semiconductor layer,wherein the zinc oxide-based barrier film is disposed between the metal electrode and the oxide semiconductor layer and the barrier film blocks a material from diffusing out of the metal electrode and into the oxide semiconductor layer.