Semiconductor devices comprising getter layers and methods of making and using the same

摘要

Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described.

主权项

1. A semiconductor device comprising:
a semiconductor substrate layer of a first conductivity type; a drift layer of a semiconductor material of the first conductivity type on the substrate layer; one or more regions of a semiconductor material of a second conductivity type different than the first conductivity type on or in the drift layer in a central portion of the device; a first passivation layer on the drift layer in a peripheral portion of the device, the first passivation layer comprising an upper surface, an inner sidewall adjacent the central portion of the device and an outer sidewall in the peripheral portion of the device; and a getter layer comprising a getter material, wherein the getter layer is on the upper surface of the first passivation layer.