发明名称 |
Infrared sensor element |
摘要 |
An infrared sensor element according to the present invention includes a substrate, and a lower electrode layer, a pyroelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the pyroelectric layer, and the pyroelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the infrared sensor element realizes the pyroelectric layer having a high orientation in a polarization axis direction, an excellent pyroelectric property. |
申请公布号 |
US9035253(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201414165744 |
申请日期 |
2014.01.28 |
申请人 |
Panasonic Intellectual Property Managment Co., Ltd. |
发明人 |
Noda Toshinari;Komaki Kazuki |
分类号 |
G01J5/00;G01J5/34;H01L37/02 |
主分类号 |
G01J5/00 |
代理机构 |
RatnerPrestia |
代理人 |
RatnerPrestia |
主权项 |
1. An infrared sensor element comprising:
a substrate; a lower electrode layer formed on the substrate; a pyroelectric layer formed on the lower electrode layer; and an upper electrode layer formed on the pyroelectric layer, wherein the substrate has a linear thermal expansion coefficient higher than that of the pyroelectric layer, and the pyroelectric layer is a polycrystalline body having an in-plane compressive stress. |
地址 |
Osaka JP |