发明名称 |
Y-decoder and decoding method thereof |
摘要 |
A Y-decoder includes a selection unit and a Y-MUX. The selection unit is coupled to the memory array for selecting the column lines. The Y-MUX is coupled to the selection unit for supplying a voltage to the selected column line. The Y-MUX includes a first switch, a second switch, a third switch and a fourth switch coupled in parallel. The first switch and the second switch are respectively for receiving a first shielding voltage and a second shielding voltage. The third switch and the fourth switch are respectively for receiving a first sensing voltage and a second sensing voltage. |
申请公布号 |
US9036410(B2) |
申请公布日期 |
2015.05.19 |
申请号 |
US201113013592 |
申请日期 |
2011.01.25 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Chen Chung-Kuang;Chen Han-Sung;Hung Chun-Hsiung |
分类号 |
G11C11/34;G11C16/06;G11C8/10 |
主分类号 |
G11C11/34 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A memory device, comprising:
a first column line and a second column line coupled to a memory cell; a third column line, spacing from the second column line with at least one column line; wherein when the memory cell is to be read, a decoder selects and supplies the first column line with a ground voltage, selects and supplies the second column line with a first sensing voltage, allows the at least one column line to float, and selects and supplies the third column line with a first shielding voltage; and a fourth column line and a fifth column line arranged successively next to the second column line, and when the memory cell is to be read, the decoder selects and supplies the fourth column line with a second sensing voltage, and selects and supplies the fifth column line with a second shielding voltage. |
地址 |
Hsinchu TW |