| 发明名称 |
Method for forming interlevel dielectric (ILD) layer |
| 摘要 |
A method for forming an interlevel dielectric (ILD) layer includes the following steps. A MOS transistor on a substrate is provided. A first undoped oxide layer is deposited to cover the substrate and the MOS transistor. The first undoped oxide layer is planarized. A phosphorus containing oxide layer is deposited on the first undoped oxide layer. A second undoped oxide layer is deposited on the phosphorus containing oxide layer. |
| 申请公布号 |
US9034759(B2) |
申请公布日期 |
2015.05.19 |
| 申请号 |
US201313740249 |
申请日期 |
2013.01.13 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chen Jei-Ming;Lin Yuh-Min |
| 分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for forming an interlevel dielectric (ILD) layer, comprising:
providing a MOS transistor on a substrate; depositing a first undoped oxide layer to cover the substrate and the MOS transistor; planarizing the first undoped oxide layer; depositing a phosphorus containing oxide layer on the first undoped oxide layer after the first undoped oxide layer is planarized; and depositing a second undoped oxide layer on the phosphorus containing oxide layer. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
