Method for manufacturing a porous insulation film and a method for manufacturing a semiconductor device comprising a porous insulation film

摘要

The deposition rate of a porous insulation film is increased, and the film strength of the porous insulation film is improved. Two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, are vaporized, and transported with a carrier gas to a reactor (chamber), and an oxidant gas including an oxygen atom is added thereto. Thus, a porous insulation film is formed by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor (chamber). In the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less.

主权项

1. A method for manufacturing a porous insulation film, the method comprising a step of:
vaporizing two or more organic siloxane raw materials each having a cyclic SiO structure as a main skeleton thereof, and having mutually different structures, transporting the vaporized raw materials with a carrier gas to a reactor, and adding an oxidant gas including an oxygen atom thereto, and forming a porous insulation film by a plasma CVD (Chemical Vapor Deposition) method or a plasma polymerization method in the reactor, wherein in the step, the ratio of the flow rate of the added oxidant gas to the flow rate of the carrier gas is more than 0 and 0.08 or less.