| 发明名称 |
Methods for forming back-channel-etch devices with copper-based electrodes |
| 摘要 |
Embodiments described herein provide methods for forming indium-gallium-zinc oxide (IGZO) devices. A substrate is provided. An IGZO layer is formed above the substrate. A copper-containing layer is formed above the IGZO layer. A wet etch process is performed on the copper-containing layer to form a source region and a drain region above the IGZO layer. The performing of the wet etch process on the copper-containing layer includes exposing the copper-containing layer to an etching solution including a peroxide compound and one of citric acid, formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof. |
| 申请公布号 |
US9034690(B2) |
申请公布日期 |
2015.05.19 |
| 申请号 |
US201314133421 |
申请日期 |
2013.12.18 |
| 申请人 |
Intermolecular, Inc. |
发明人 |
Van Duren Jeroen;Lee Sang;Sun Zhi-Wen |
| 分类号 |
H01L21/16;H01L21/306;H01L27/12;H01L21/02;H01L29/66;H01L29/786;H01L21/465;H01L21/70 |
主分类号 |
H01L21/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
providing a substrate; forming an IGZO layer above the substrate; forming a copper-containing layer above the IGZO layer; and performing a wet etch process on the copper-containing layer to form copper-containing regions above the IGZO layer, wherein the performing the wet etch process on the copper-containing layer comprises exposing the copper-containing layer to an etching solution comprising a peroxide compound and one of formic acid, malonic acid, lactic acid, etidronic acid, phosphonic acid, or a combination thereof. |
| 地址 |
San Jose CA US |
