| 发明名称 |
Methods for improving thermal stability of silicon-bonded polycrystalline diamond |
| 摘要 |
Methods for preparing a silicon bonded PCD material involving a one step, double sweep process and drilling cutters made by such processes are disclosed. The PCD material includes thermally stable phases in the interstitial spaces between the sintered diamond grains. The method sweeps a diamond powder with a binder to form sintered PCD, reacts said molten binder with a temporary barrier separating said binder and said diamond from a silicon (Si) source, and sweeps said sintered PCD with said Si source to form SiC bonded PCD. |
| 申请公布号 |
US9034064(B2) |
申请公布日期 |
2015.05.19 |
| 申请号 |
US201213441791 |
申请日期 |
2012.04.06 |
| 申请人 |
|
发明人 |
Suryavanshi Abhijit |
| 分类号 |
C09K3/14;C04B35/52;B24D18/00;B24D99/00;C04B35/645;C22C1/05;C22C26/00;B22F5/00 |
主分类号 |
C09K3/14 |
| 代理机构 |
|
代理人 |
Gasaway Maria C. |
| 主权项 |
1. A method of preparing polycrystalline diamond with thermally stable phases in the interstitial spaces between the sintered diamond grains comprising:
sweeping a diamond powder with a binder to form sintered PCD; reacting a temporary barrier with a molten phase of said binder, the temporary barrier separating said binder and said diamond from a silicon (Si) source; and sweeping said sintered PCD with said Si source to form SiC bonded PCD. |
| 地址 |
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