Semiconductor memory devices

摘要

The semiconductor memory device includes a cell capacitor having a first terminal electrically connected to a storage node and a second terminal electrically connected to an internal node, an internal voltage generator configured to generate an internal voltage signal applied to the internal node in response to a power-up signal, and an initialization element configured to initialize the internal node in response to the power-up signal.

主权项

1. A semiconductor memory device comprising:
a cell capacitor having a first terminal electrically connected to a storage node and a second terminal electrically connected to a first internal node; a first internal voltage generator configured to generate a first internal voltage signal applied to the first internal node in response to a power-up signal; a second internal voltage generator configured to generate a second internal voltage signal applied to a second internal node in response to the power-up signal; and an initialization element electrically connected to the first internal node and configured to initialize the first internal node in response to the power-up signal, wherein initialization of the first internal node is performed by equalizing voltage levels of the first and second internal nodes, and the second internal voltage signal has a negative voltage level which is lower than the level of a ground voltage.