| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device with a simple structure when a plurality of tunnel transistors are formed on a semiconductor substrate to constitute a circuit.SOLUTION: A semiconductor device includes a first-conductivity-type first transistor (Tr) and a second-conductivity-type second transistor (Tr) that are formed on a semiconductor substrate (1). The first transistor includes a first-conductivity-type or a second-conductivity-type first channel region (15a) between a second-conductivity-type first source region (11a) and a first-conductivity-type first drain region (12a) that are formed so as to sandwich a first gate electrode (3a) on the substrate. The second transistor includes a second channel region (15b) having the same conductivity type as the first channel region between a first-conductivity-type second source region (11b) and a second-conductivity-type second drain region (12b) that are formed so as to sandwich a second gate electrode (3b) on the substrate.</p> |
