| 摘要 |
PROBLEM TO BE SOLVED: To provide a FS (Field Stop) IGBT which can control LT (LifeTime) of a residual hole with high precision and inhibit leakage current and has little loss and enable high-speed switching with a simple structure; and provide a manufacturing method of the FS IGBT.SOLUTION: An IGBT 10, 11 comprises: an LT control layer 5 formed in a semiconductor substrate 1S in a thickness direction by ion implantation of helium (He) with a predetermined half bandwidth; and an FS layer 6 formed in the semiconductor substrate 1S in a thickness direction by ion implantation of hydrogen (H) with a predetermined half bandwidth, in which a half bandwidth region of the LT control layer 5 and a half bandwidth region of the FS layer 6 overlap each other. |
