| 摘要 |
PROBLEM TO BE SOLVED: To prevent insulation breakdown from easily occurring between two semiconductor chips when a boundary face of an insulation film and the semiconductor chip becomes a starting point of the insulation breakdown.SOLUTION: A semiconductor device comprises: a first semiconductor chip SC1 including a first multilayer wiring layer MINC1 formed on a first substrate SUB1 and a first inductor IND1 formed in the first multilayer wiring layer MINC1; a second semiconductor chip SC2 including a second multilayer wiring layer MINC2 formed on a second substrate SUB2 and a second inductor IND2 formed in the second multilayer wiring layer MINC2. The first semiconductor chip SC1 and the second semiconductor chip SC2 are overlapped in orientation where the first multilayer wiring layer MINC1 and the second multilayer wiring layer MINC2 are opposed to each other. The first inductor IND1 and the second inductor IND2 are overlapped in plan view. In a Y direction, at least one end of a first insulation film INSF1 does not overlap an end of an opposite region FR1. |
