| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming pillar-type microbumps on a semiconductor component, such as an integrated circuit chip or an interposer substrate.SOLUTION: A plurality of contact openings 16 are formed in a passivation layer 15 that is deposited on a component, so that one bump contacts the metallization of the component through the plurality of openings. Preferably, the plurality of openings form a regular array of small openings. Preferably, contact pads 18, 19 are conformally deposited on the openings before the bump is formed by electroplating. Because of the plurality of openings, flat microbumps can be formed of a very small diameter, allowing production of bump arrays having a very small pitch. The openings also increase the shear strength of the individual bumps. The openings preferably have slanted sidewalls. The present invention also relates to a semiconductor package including one or more components obtained by the method of the present invention.</p> |
