FLIP CHIP LIGHT-EMITTING DEVICE

摘要

The present invention relates to a flip chip light emitting device capable of improving light extraction efficiency by upwardly reflecting light emitted to the side of an active layer by forming a reflection structure on the upper side of a sub mount substrate to be inserted into an exposure groove to pass through a part of an n-type semiconductor layer of a nitride semiconductor light emitting cell block comprising a flip chip light emitting device. For this, the flip chip light emitting device according to the present invention includes a nitride semiconductor light emitting cell block which includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer which are successively stacked on a substrate and a sub mount substrate which is flip-chip bonded to the nitride semiconductor light emitting cell block. The flip chip light emitting device includes the exposure groove which is formed by etching a part of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer to expose a part of the n-type semiconductor layer of the nitride semiconductor light emitting cell block and a reflection structure including an upper side which is narrow and a lower side which is wide which is formed on the upper side of the sub mount substrate to be located in the exposure groove and upwardly reflects the light emitted from the side of the active layer to the exposure groove.